お知らせ
ホーム > お知らせ《2018年》 > 【論文掲載】城戸・笹部・千葉研究室のM2 江部日南子さんのペロブスカイト量子ドットLEDに関する論文がJournal of Photopolymer Science and Technologyに掲載されました。
お知らせ《2018年》
【論文掲載】城戸・笹部・千葉研究室のM2 江部日南子さんのペロブスカイト量子ドットLEDに関する論文がJournal of Photopolymer Science and Technologyに掲載されました。
2018/07/23
城戸・笹部・千葉研究室のM2江部日南子さんのペロブスカイト量子ドットLEDに関する論文がJournal of Photopolymer Science and Technologyに掲載されました。ペロブスカイト量子ドッとアルキルアンモニウム塩を積層化することで、ペロブスカイト量子ドットLEDの高性能化を達成しました。
Interfacial Engineering of Perovskite Quantum-Dot Light-Emitting Devices Using Alkyl Ammonium Salt Layer
Hinako Ebe, Yoshihito Takahashi, Jun Sato, Takayuki Chiba, Satoru Ohisa, and Junji Kido,
Hinako Ebe, Yoshihito Takahashi, Jun Sato, Takayuki Chiba, Satoru Ohisa, and Junji Kido,
Journal of Photopolymer Science and Technology, 31, 329-333, 2018.
Herein, we demonstrated that alkyl ammonium salts containing the Br anion, oleylamine bromide (OAM-Br), was used as an interfacial engineering layer between the hole transport layer (HTL) and the perovskite QDs to passivate cation- and anion-defects in perovskite QDs. The OAM-Br interfacial layer enables a high PLQY due to the suppression of surface defects in perovskite QDs. Thus, the CsPbBr3 QD-LEDs with an OAM-Br layer exhibited a maximum power efficiency of 3.35 lm/W and an external quantum efficiency (EQE) of 2.08% that which are higher efficiencies than those of the LEDs without an OAM-Br layer.
Herein, we demonstrated that alkyl ammonium salts containing the Br anion, oleylamine bromide (OAM-Br), was used as an interfacial engineering layer between the hole transport layer (HTL) and the perovskite QDs to passivate cation- and anion-defects in perovskite QDs. The OAM-Br interfacial layer enables a high PLQY due to the suppression of surface defects in perovskite QDs. Thus, the CsPbBr3 QD-LEDs with an OAM-Br layer exhibited a maximum power efficiency of 3.35 lm/W and an external quantum efficiency (EQE) of 2.08% that which are higher efficiencies than those of the LEDs without an OAM-Br layer.
-
-
シェア
-
送る
